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What isHDPCVD?
HDPCVD，Full nameHigh density Plasma Chemical Vapor Depositation, that is, high -density ionic chemical chemical gas depositionEssenceThe plasma density generates is very high, usually in10¹¹ to 10on IONS/CM³ magnitude.In contrast, PECVD's plasma density is very low. In the case of the interval width of less than 0.5 μm, filling a high -width of the high and width with PECVD will generate empty holes
Therefore, the line widthWhen 90nm, you need to replace it with HDPCVD.For details, see the article: CMOS filling technology under different chip nodes
The principle of HDPCVD?
HDPCVD produces high -density plasma is similar to ICP.Inductor is an inductive coil,Radio frequency currentWhen a coil is passed, a magnetic field of cross -transformation will be generated.This cross -magnetic field is induced in the plasma reactor to generate a changeable electric field through induction coupling, which accelerates electronics and inspires it as high -energy electrons.High -energy electronicsIt will collide with the gas molecules, leading to gas decomposition and forming a plasma.On the other hand, apply on the waferRF partial pressure attracts high -energy particles bombardment and increases the direction of the particles.Therefore, HDPCVD can fill the structure of 6: 1.
Industry Information
© ShanHai Chip City (Shenzhen) Technology Co., Ltd. Guangdong ICP No. 2024259560 Guangdong Public Security No. 44030402005948
