TMD May Replace SI, And The Next -Generation Semiconductor Material Is Coming

1965In the year, Gordon Moore, the co -founder of Intel, proposed the famous Moore's law. It predicts that every 18 to 24 months, the number of transistors that can be accommodated on the chip will double to bring performance improvement or cost decline.However, as the size of the transistor is approaching the physical limit, further reduction becomes more and more difficult. At this time, the emergence of new materials is needed to be used as a substitute for traditional silicon -based chips, and the law of Moore is continued.

According to foreign media reports, researchers of Princeton Plasma Physics Laboratory (PPPL) researchers are developing the next -generation chip. This chip has the characteristics of smaller, thinner, and more efficient.The material is the transitional metal dichalcogenides (TMD) instead of traditional silicon (SI).

Silicon -based chip defects

1954In the year, Bell Labs, John Badding, Walter Blaton, and William Shickley won the Nobel Prize in Physics for the invention of the transistor.This invention not only changed the development of the entire electronic industry, but also laid the foundation of the modern information society.In addition, the invention of the transistor is also known as20One of the most important inventions of the century.

However, at the beginning, the transistor was mainly used as semiconductor materials.On the one hand, it is limited to the technology at the time, and it is easier to purify and process silicon for silicon.The melting point is lower than that of silicon, which makes it easier to deal with it during the manufacturing process.In addition, the doping technology of was more mature at the time and could control the conductive performance of the material more reliably.

At the same time, the bandwidth of the 锗 is less than the width of the silicon (the width of the band of the 锗 is about 0.67 EV, and the width of the forbidden band of silicon is about 1.12 EV).This means that at room temperature, it is easy to produce free carrier (electronics and holes), which is easier to conduct electricity.This is very important for early transistor technology, because it can work effectively at room temperature without additional heating or other conditions.

And before the transistor invention, 锗 has been widely used for other electronic applications, such as point contact rectifiers.This research foundation has made 然 a natural choice, because scientists and engineers have a certain degree of understanding of the nature of 锗.

However, as semiconductor materials, it also has its obvious disadvantages, mainly because the performance will decline when the temperature rises.The resistivity of 度 is fast with the temperature increaseSpeed down, which means that in high temperature environments, cymbal transistors may become unstable.

In 1959, Robert Nuus, Andy Grucruf, and others improved the design of integrated circuits at the Fairy Semiconductor Corporation and adopted a flat process to make Silicon the main material for manufacturing integrated circuits.In the subsequent industries, silicon slowly replaced.

But after half a century, the current silicon -based chip has begun to face some significant problems, mostly related to physical limit, economy, and environmental factors.As the crystal size decreases, the quantum effect, such as the tunnel effect, begins to appear, leads to current leakage and signal interference, which reduces the performance and reliability of the chip.At the same time, small -sized crystals will generate more heat, and the heat dissipation problem becomes more and more serious, which limits the performance and density of the chip.

If other materials are used to replace the silicon -based chip, these problems may be solved.In recent years, scientific researchers have explored many new materials such as gallium arsenide (GaaS) and phosphorus (INP), which can show advantages in high -frequency and high -power applications, and zinc oxides (IGZO) can be used.Used to make transparent, flexible electronic devices.

Among them, a series of compounds including MOS2 include MOS2. Because of its excellent photoelectric, mechanical and thermal performance, it is widely regarded as one of the ideal candidate materials for the rear semiconductor era to continue Moore's law.

Chip material moves from 3D to two -dimensional

The so -called TMD is a type of semiconductor material with a MX2 structure. Among them, M represents the transition metal (such as MO, W, etc.), and X represents the sulfur element(likeS、Se、TeTo.This kind of material is in the fields of nano -electronics and optoelectronics due to its unique structure, semiconductor or superconducting properties, and excellent mechanical properties.have a broad vision of application.Especially single -layer TMDs, such as MOS2, have shown huge potential in the field of photoelectric detection because of the characteristics of its direct gap.

According to researchers at PPPL in the United States, TMD can be thinner to three atoms, and the two layers outside can use sulfur elements or oxygen elements.The middle layer can be replaced with any transition metal.

Because this material is too thin, any layer of small changes such as or more atoms will affect the performance of the material.Although this change is called defect, it does not mean that this defect is harmful.

Researchers said that they can obtain beneficial materials according to the type and nature of the defects, such as the electrons that can generate excessive electrons in the material, so that it can become N -type (that is, materials with more electrons)Type (that is, materials with more cavities or positive charge).

The combination of N -type and P type materials in computer chips can provide better conductivity. Some current semiconductor technology is to obtain similar features by doping.

And compared with silicon semiconductors, TMD has a adjustable band gap, which can be controlled by changing the number of layers. At the thinnest, there is only one layer and only three atoms in height.This also means that compared to the past silicon -based materials, TMD can be made with different materials, which is both flexible and durable.

already2021In the year, Academician Huang Wei and Researcher Yan Jiaxu of Nanjing University of Technology published related papers, which mentioned that through the stacking project, it can be regulated at the level of atomic levelTMDThe photoelectric properties provide new dimensions for the design of the new device in the post -Moore era.The research on two -dimensional material stacking regulation will provide new dimensions for the design of new devices in the post -Moore era, and solve the compatibility of integrated craftsmanship from the source.It is of great significance to promote the independent development of my country's semiconductor chip.

Of course, although this material is very dreamy, research is still in a relatively basic stage, and many materials have not been deeply studied or synthesized. In actual applications, there are still stability, manufacturing, and compatibility with existing silicon -based technologies.question.

In addition, TMD's electronic device performance, such as carrier migration rate, although it has potential advantages, has not yet reached the level that can completely replace silicon.

From the perspective of the development path of the current chip, TSMC has been marched towards the 1NM process chip, and other companies have also launched the development roadmap of the nano -crystal tube before 2036, and Intel has been studying the use of TMD to make transistor.PPPL's research institute believes that by 2030, it is expected to have a real TMD transistor that can be used for device.

Summarize

Silicon has been the main material for integrated circuits for a long time, but with the continuous reduction of technical nodes, the silicon -based chip encounters physical limits and economic efficiency problems.This requires new materials to replace silicon to continue Moore's law. TMD is one of them. It has theoretical potential of continuing Moore's law. However, in order to achieve thisAs for more breakthrough progress.With the continuous efforts of scientific researchers, TMD's application prospects in future semiconductor technology are worth looking forward to.

Copyright and Disclaimer

1. This website reproduces and indicates works from other sources. The purpose is to pass more information, which does not mean that this website agrees with its views or confirms the authenticity of its content.EssenceWhen other media, websites, or individuals reprint from this website, they must retain the source of the works notes on this website, and bear the legal responsibilities such as copyrights.

2. If the contents of the work, copyright and other issues are involved, please contact this website within one week from the date of publishing the work. Otherwise, it is deemed to be the direct responsibility and joint responsibility of abandoning relevant rights and not assumed the infringement behavior of such works.When other media, websites, or individuals reprint from this website, they must retain the source of the works notes on this website, and bear the legal responsibilities such as copyrights.

3. Recently, many media have reprinted this article without permission; here, solemnly declare.Each media is welcome to reprint, but it must be indicated (Source: Shanhai Xincheng).If the source is found, it will be held accountable.