Home > Industry Information > National Team Blessing, Chip Manufacturing Key Technology Breakthrough For The First Time
According to recent news released by Nanjing, the National Third -generation Semiconductor Technology Innovation Center (Nanjing) lapIn 4 years, it has independent research and development, and has successfully reported key technologies for manufacturing the groove -in silicon carbide MOSFET chip to break the performance ceiling of the plane -type silicon carbide MOSFET chip.It is reported that this is my country's first breakthrough in this field.
Silicon carbideThe characteristics of the MOS structure are simple craftsmanship, better cellular consistency, and high avalanche energy; the disadvantage is that when the current is limited in the narrow N zone near the P body area, the JFET effect will be generated when flowing through, and the general -state resistance will be increased, and the general -state resistance will be increased, and the general -state resistance will be increased, and the general -state resistance will be increased, and the general -state resistance will be increased, and the general -state resistance will be increased, and the state resistance will be increased, and the state resistance will be increased.Parasitic capacitors are large.
The groove -type structure is to bury the gate into the substrate to form a vertical ditch. The characteristic is that it can increase the density of the cells.JFET effect, the channel crystal surface can achieve the best channel migration rate, and the direction resistance is significantly reduced than the plane structure; the disadvantage is that the groove is opened, the craftsmanship is more complicated, and the consistency of the cells is poor.Low.
The key is craftsmanship.Huang Runhua, technical director of the National Third -generation Semiconductor Technology Innovation Center (Nanjing), introduced that silicon carbide materials are very hard. The plane is changed to a groove, which means that it is necessary to dig pits on the materials and not be potholes.During the preparation process, the etching accuracy, etching damage, and etching surface residues of the etching process have a fatal impact on the development and performance of silicon carbide devices.
In this regard, the core R & D team of the National Third -generation Semiconductor Technology Innovation Center (Nanjing) and the entire line of cooperation with the entire line, it takes timeIn 4 years, continue to try new processes, and finally establish a new process process, break through the difficulty of digging, stability, and accuracy, and successfully manufacture the groove -type silicon carbide MOSFET chip.The groove -type silicon carbide MOSFET chip product is developed, and the groove -type silicon carbide power device will be launched. It is expected that it can be put into application in the fields of new energy vehicles, smart grids, and photovoltaic energy storage.
What is the blessing of our breakthrough in our lives and semiconductor industry?Huang Runhua introduced the new energy vehicle as an example. Silicon carbide power devices have the advantage of power saving compared to silicon devices, which can enhance the battery life5%; after applying the groove structure, the design of lower resistance can be achieved.In the case of unchanging leading performance indicators, a higher -density chip layout can be achieved, thereby reducing the cost of chip use.
International large manufacturer deep cultivation grooves silicon carbideMOSFET chip
Groove -type silicon carbideThe MOSFET chip research is popular internationally. Rom, Bingfeeling, Japanese Electric, Japanese Sumitomo, Ansonami, Mitsubishi Electric Power Device Made also has strong advantages in groove -type silicon carbide MOSFET chip manufacturing technology.
Rom
Public information shows that Rom is the first to turn to the grooveMOSFET's company, 2018 Rom launched an advanced car -level groove -level silicon carbide MOSFET.In 2020, Rom developed the fourth -generation groove structure MOSFFT. By further improving its own dual -groove structure, the short -circuit tolerance time required for applications such as EV traction inverters. Compared with the third generation, it is not in the third generation.In the case of sacrificing short -circuit tolerance time, the guide resistance is reduced by about 40%, the lowest in the industry.At present, Rom is still developing the fifth -generation groove technology.
According to the official Rom, the grooveThe MOS structure is a structure that forms a groove (groove MOS) in the extension layer and is filled with polysilicon. This structure can alleviate the concentration of the electric field, which can reduce the resistivity of the extension layer and be lower VF when it is applied.In addition, when it is applied in reverse, the concentration of the electric field can be eased to achieve lower IR.
Ying Feiling did not choose to enter the plane structure market, but chose the groove structure directly, and its products were positioned in the high -end market.
The design method of Yingfei Ling's groove is different from the soul, belongs to the structure of the half -bag groove, as shown below.There is a passage on one side of each groove, and the other side is deepP+injection coverage, as shown below, is the design diagram of the SIC MOSFET of Yingfeeling.Specifically, Yingfeeling's CoolSic? MOSFET contains a unique asymmetric groove structure: on the left side of the side wall of the groove, it contains the MOS channel facing the plane to optimize the mobility of the channel; on the side of the groove's side of the groove;On the right side of the wall, a large part of the bottom of the groove is embedded in the P+trap, and the P+trap extends below the bottom of the groove, thereby reducing the critical electrical field from the state, and plays the role of the body diode.
201In 6 years, Yingfeeling launched the first generation of COOLSIC series silicon carbide MOSFET, and it updated the second-generation product in 2022, which enhanced the load capacity of 25%-30%compared to the first generation.MOSFET uses an advanced groove structure, which has lowerDirection loss and switch loss have improved energy efficiency.
Japanese electricity
On March 31, 2023, Denso announced that it had developed the first inverter using silicon carbide (SIC) semiconductor.The inverter is integrated in Eaxle, an electric driver module developed by Blue Nexus Corporation, and will be used for the new Lexus RZ. This is the first special battery electric vehicle (BEV) model made by the car.DENSO refers to its SIC technology as Revosic.
Denso's unique groove -type MOS structure uses the Denso patented electric field eased technology groove grid semiconductor device, which improves the output of each chip, because they reduce power loss caused by heating.Direction resistance operation.
Hostel
Sumitomo Electrician uses a unique crystal surface new developmentV -shaped groove metal oxide semiconductor field effect transistor (VMOSFET).VMOSFET has superior characteristics such as high -efficiency, high blocking voltage, and high stability in harsh environments. It realizes large current (single chip 200A), suitable for electric vehicles (EV) and hybrid vehicles (HEV).Public information shows that Sumitomo Electrician is cooperating with the National Advanced Industrial Science and Technology Research Institute to develop the next generation of VMOSFET with the lowest in -resistance of the world.
Ansonami
AnsonSilicon carbideMOSFET's groove structure is still under development, and it has accumulated about 20 related patents.In the first half of this yearThe latest product released by Mei isM3S is the second -generation 1200V SIC MOSFET, which still continues to continue the plane structure.It is reported that the next -generation M4 will be upgraded to a groove structure, while reducing the area of the SIC MOSFET chip, the cost will also be significantly optimized.Dr. Wu Tong, the person in charge of the technical application of the automotive market and chief expert of silicon carbide in Ansonmei China, stated in an interview that there are many sample samples in Ansonmei internally testing.There will be certain risks in terms of sex.Therefore, the company is testing and reliability optimization of points considering risks to improve the utilization rate of groove grids.
Mitsubishi motor
In 2019, Mitsubishi Electric developed a sic mosFet in the groove. In order to solve the problem of the trench -type gate insulating film under high voltage, the Mitsubishi motor developed a uniquely developed by the advanced simulation of the structural design stage.The electric field restricted structure will be reduced to the conventional plane level, which will be reduced to the conventional plane level, so that the grid insulating film will obtain higher reliability at high voltage.
Chief Technical Advisor of Mitsubishi Electric Power Device Production OfficeDr. Gourab Majumdar said in an interview with Electronics Network that two new technologies will be used in the silicon carbide route in the future. Below 1200V is the groove grid silicon carbide MOSFET.The plane grid silicon carbide MOSFET technology integrated in MOSFET.
He said that the new groove grid of Mitsubishi Motors adopts three self -developed technologies: First, inclined ion injection technology (Tilted Ion Implantation Technology to improve the productivity of the chip; the second is the group P+BPW (bottom P well). Use BPW technology to reduce the strength of the ranging layer at the bottom of the grid to make the chip higher.Reliability; Third, N+JFET doping technology is used in the longitudinal channel to reduce the overall chip's overall loss than the traditional plane grid by more than 50%.
From the perspective of the global market, the study of foreign silicon carbide groove devices earlier. Several leading companies have gradually established patented barriers to gradually import the market; domestic research in silicon carbide groove devices is still in its infancy, most of whichManufacturers are still silicon carbideMOS structure is mainly.In recent years, Chinese enterprises have made efforts on 6 -inch and 8 -inch silicon carbide, and they have continuously reduced the gap with international manufacturers. In the future, they will also break through in silicon carbide grooves, with a view to achieving curve overtaking on the silicon carbide track.
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